Abstract
Built-in voltage in ITO/<TEX>$Alq_3$</TEX>/ Al organic light-emitting diodes was studied by varying a thickness of <TEX>$Alq_3$</TEX> layer using modulated photocurrent technique at ambient condition. A thickness of the <TEX>$Alq_3$</TEX> layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the <TEX>$Alq_3$</TEX> layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The <TEX>$Alq_3$</TEX> layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.
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