ALE growth of ZnS 1− xSe x thin films by substituting surface sulfur with elemental selenium

Abstract

Polycrystalline ZnS 1− x Se x thin films were grown from ZnCl 2, H 2S and Se on soda lime substrates using the atomic layer epitaxy technique. The selenium was incorporated into the films by substituting sulfur atoms on the surface of the growing film with elemental selenium. ZnCl 2 and H 2S pulses were used in every cycle and selenium, which was used only in a certain fraction of the cycles, was always pulsed after H 2S. Growth temperatures were 400 and 500°C. Rutherford backscattering spectroscopy and energy dispersive X-ray spectroscopy measurements indicated that x in ZnS 1− x Se x can be varied between 0 and 0.8. Interplanar spacings evaluated from XRD data varied linearly as a function of x, thereby verifying the existence of the ZnS 1− x Se x solid solution.