Abstract
Silicon photonics enables the fabrication of optical devices with standard semiconductor processing technology. With high transparency and modal confinement, Si has matured into a well-established infrared optical material. Nanostructured silicon has been studied extensively due to its optical properties, especially silicon nanowires due to the myriad of available fabrication techniques, the broad range of physical dimensions, and the resulting optical characteristics. In this study, we fabricate silicon nanowires using a wet chemical process and modify their absorptive properties via atomic layer deposition passivation. The passivated nanowires absorb 95% of light from the visible to infrared, with a minimal angular dependence, making them excellent candidates for broadband absorber applications.
Highlights
Silicon nanowires (SiNWs) have attracted much interest over recent years due to their remarkable material properties
Metal-Assisted Chemical Etching (MACE) processing is a relatively simple and low-cost technique, which can be modified to control the morphology of SiNWs
The wire length depends on the etching time and concentration of silver nitrate (AgNO3) during MACE
Summary
Silicon nanowires (SiNWs) have attracted much interest over recent years due to their remarkable material properties. We fabricate SiNWs using the MACE technique, passivate the wires using a thin oxide layer, and investigate the broadband absorption capabilities of the composite SiNW–oxide matrix.
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