Abstract
The reliability of atomic layer-deposited Hf0.2Zr0.8O2and HfO2on a SiON interfacial layer (IL) with cyclic deposition and annealing (DADA) and cyclic deposition and slot-plane-antenna Ar plasma exposure (DSDS) is studied. The results are compared with control, that is, As-Deposited samples, without any treatment during or after the dielectric deposition. DSDS Hf0.2Zr0.8O2demonstrates a promising equivalent oxide thickness (EOT) downscaling ability, a reduced gate leakage current, and low mid-gap interface state density as compared to the control device, while DADA Hf0.2Zr0.8O2has degraded the value of EOT as well as a degraded interface. When devices are subjected to a constant voltage stress in the gate injection mode, DSDS Hf0.2Zr0.8O2showed a four times reduction in the flat-band voltage shift and a three order of magnitude reduction in the stress-induced leakage current within 100-s stress as compared to the control sample. The observed time to failure, T63%, is the highest for DSDS Hf0.2Zr0.8O2. The addition of Zr and the cyclic plasma exposure (DSDS process) seems to supress the oxide trap formation in Hf0.2Zr0.8O2films. When DSDS Hf0.2Zr0.8O2deposited on two different ILs, SiON and plasma oxynitride are compared, in that SiON demonstrates improved reliability as compared to plasma oxynitride.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
