Abstract
Abstract A π-conjugated ionized porphyrin 5,15-bis(3-acetenyl-pyridine ethyl ammonium bromide)-10,20-bis(5-(2-butyloctyl)-thienyl)-porphyrin zinc (II) (m-PYBrZnPor) is developed as cathode buffer layers (CBLs) to modify the interfaces between Ag cathode and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) of fullerene/perovskite (CH3NH3PbI3) planar heterojunction solar cells (PSCs). m-PYBrZnPor is soluble in ethanol, and therefore can be spin-coated on the PCBM layer conveniently via solution processing as CBLs without corroding the under-layers of PCBM when we fabricate the devices. Furthermore, this simple modification of the cathode/PCBM interfaces by m-PYBrZnPor can remarkably enhance the power conversion efficiency (PCE) up to 17.5% with simultaneously enhanced open circuit voltage, short circuit current and fill factor values even compared with those of the devices with bathocuproine (BCP) CBLs, which are contributed by the suppressed leakage current, reduced recombination losses and reduced work function induced by the porphyrin CBLs.
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