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Abstract
Formation of intermetallic phases in Al/Au and Al/Cu thin film couples annealed at temperatures between 100°C and 250°C has been investigated using X-ray diffraction and optical reflectivity techniques. Several intermetallic compounds which exist in a binary equilibrium phase diagram were produced in the couples after annealing. The formation and growth of Al2Cu, AlCu and Al2Au phases could be observed by the variation of optical reflectivity with wavelength. The interdiffusion of metals in Al/Au thin film occurred faster than that in Al/Cu during annealing. For example, the growth rate constants (k) of Al2Au and Al2Cu layers in the thin film couples annealed at 200°C were 3.4×10−8 and 2.4×10−9 m/s1⁄2, respsctively. The growth rate of these intermetallic layers was faster in thin films than in diffusion couples of bulk metals.
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Schedule a callMore From: Journal of the Japan Institute of Metals and Materials
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