Abstract
A room-temperature wafer bonding using Al/Au multi-layers with a Pt or an Al 2 O 3 barrier layer has been demonstrated for wafer-bonded reflectors in the ultraviolet (UV) spectral region (200–400 nm). Surface activation prior to Au-Au room-temperature bonding was performed using argon radio-frequency plasma. Experimental results showed that the Al 2 O 3 layer prevents the solid-state diffusion between Al and Au. A high reflectance of more than 80 % was obtained using the Al2O3 barrier layer in the UV spectral region.
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