Abstract
Solution processed Hf In Zn O( HIZO) thin film transistors( TFTs) with Hf Si Oxdielectrics modified by Al_2O_3 layer were fabricated. After the Al2O3 layer was inserted,the optical transmittance of Hf Si Oxfilms was hardly changed and the surface root mean square( RMS) roughness was decreased from 0. 24 to 0. 16 nm. The excellent surface was benefited to improve the interface properties between dielectrics and semiconductors of HIZO TFTs. Furthermore,the characteristics of thin film transistors were improved. The threshold voltage shift between forward and reverse sweep was decreased obviously. Simultaneously, the threshold voltage and subthreshold voltage were decreased,and the on to off current ratios and mobility were increased. Above all,the experiment results indicate that Al_2O_3 film is fit for using in TFTs as the interface modification layer to improve TFTs performance.
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