Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Abstract

We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Kα radiation. An XPS survey scan, an Al 2p narrow scan, an O 1s narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.