Abstract
Room-temperature ferromagnetism has been found in AlN grown by direct arc discharge method using the direct reaction of Al powder with N2 gas. The observed room-temperature ferromagnetism which arises from the aluminum vacancy is intrinsic properties in AlN. The results could rule out oxygen impurities as the main cause of magnetic origin in AlN. First-principles calculations reveal that spontaneous spin polarization creates with a 3.0 uBlocal moment for AlN and magnetic originate from the polarization of the unpaired 2p electrons of N surrounding the Al vacancy. The aluminum vacancy induced may be applicable to other Ш-V nitride semiconductors in turning their magnetism.
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