Abstract
Room-temperature hot electron luminescence of MOS tunnel diodes has been experimentally studied. Complete radiation spectra are presented for the first time for the direct-tunneling regime. Essential parameters are: oxide thickness 2.0…2.5 nm, doping level 2·10 18 cm −3, current density ∼ 10 2 A/cm 2, and photon energy 0.73…3.2 eV.
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