Year-end Sale % OFF 
Abstract
A synthetic material with large thermoelectric anisotropy has been prepared from a metal–semiconductor multilayer structure. By an alloying process, a multilayer stack A–B–A…, where A and B are pure aluminum and n-silicon, is produced with a thermoelectric anisotropy ΔS=S‖−S⊥≅1.5mV∕K, where S‖ and S⊥ are the absolute Seebeck coefficients along and perpendicular to the layers, respectively. The use of this synthetic material for light sensing applications is demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
