Abstract
The Al nonalloyed ohmic contacts were fabricated on MgxZn1−xO (0≤x≤0.2) thin films. HCl surface treatment significantly reduced the specific contact resistances to value around 10−4 Ω cm2. X-ray photoelectron spectroscopy (XPS) analysis revealed that the HCl treatment increased the oxygen vacancy density and introduced chlorine to the semiconductor surface, resulting in a thin conductive layer and thus reduced specific contact resistance. A subsequent oxygen plasma treatment reduced the oxygen vacancy density, and correspondingly increased the specific contact resistance. Al-ZnO contacts were insensitive to the HCl treatment, due to the formation of a highly conductive Al-doped thin interface layer.
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