Abstract
Surface roughening after high-dose ion implantation and annealing was investigated with STM and optical interference methods for high-dose 10 keV B + and 45 keV As + implants into Si(100) Al metal films deposited on p + and n +-Si(100) by cluster beam (CB) and physical vapor deposition (PVD) were characterized with electron diffraction, RBS-channeling and TEM/STM imaging. Epitaxial Al(110) bi-crystalline films were formed by deposition with neutral cluster beams while polycrystalline films were formed by PVD.
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