Abstract
Polycrystalline Si (poly-Si) films are in situ grown on Al-coatedglass substrates by inductively coupled plasma chemical vapourdeposition at a temperature as low as 350°C. Compared to thetraditional annealing crystallization of amorphous Si/Al-layerstructures, no layer exchange is observed and the resultant poly-Sifilm is much thicker than Al layer. By analysing the depth profiles ofthe elemental composition, no remains of Al atoms are detected in Silayer within the limit (<0.01 at.%) of the used evaluations.It is indicated that the poly-Si material obtained by Al-inducedcrystallization growth has more potential applications than thatprepared by annealing the amorphous Si/Al-layer structures.
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