Abstract
Al compositional distribution of Al x Ga1−x N epilayers grown on SiN-treated sapphire substrate by atmospheric pressure metalorganic vapor phase epitaxy is investigated. The growth process was interrupted at various stages allowing a systematic study of Al x Ga1−x N epilayers during the smoothing process. A transition from three-dimensional (3D) to two-dimensional (2D) growth mode is revealed by in situ laser reflectometry (λ = 632.8 nm) as well as by atomic force microscopic images. Then, ion mass spectrometry analysis was performed to obtain the solid Al composition (x) profile as well as by photoluminescence measurements. Moreover, the in situ reflectivity signal is simulated; thereby Al x Ga1−x N growth rate is derived and compared with that of GaN layer in order to study the effect of the aluminum incorporation on the growth mechanism. It is worth emphasising that the growth mode of Al x Ga1−x N layers is dictated by SiN treatment, which influences the Al compositional distribution. Electron mobility and refractive index against the thickness of Al x Ga1−x N layers have similar trends, which confirm a competitive mechanism between growth mode and Al incorporation. Therefore, the correlation between the Al composition and morphological, optical, and electrical properties of Al x Ga1−x N layers is established.
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