Al Growth on Si(111)(√ 3×√ 3)-Ga Surfaces at Room Temperature

Abstract

The initial stages of Al growth on Si(111)(√ 3×√ 3)-Ga surfaces at room temperature (RT) have been studied by reflection high-energy electron diffraction and X-ray photoemission spectroscopy. The Al-Ga exchange reaction takes place, resulting in the formation of Al-Si bonds at the interface. Al films contain both (111)- and (100)-oriented structures. Most of the Ga atoms segregate at surfaces of the Al overlayer from the very initial stage, even at RT.