Abstract
The structure and characteristics of AlGaN-based UV photodetectors are presented. Photoconductive, Schottky barrier, and metal–semiconductor–metal devices with Al mole fractions of up to 35% have been fabricated, showing cutoff wavelengths that shift from 365 to 290 nm. Photoconductive detectors are non-linear with incident power and have very slow time response tails, while photodiodes are quite linear, and their time response is limited by the device resistance–capacitance product. Some material issues related to photodetector design are discussed. Solar UV monitoring and biological applications are described.
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