Abstract
Al Ga N ∕ Ga N high electron mobility transistors were grown by molecular beam epitaxy on Si on poly-SiC substrates formed by the Smart Cut™ process. The Smart Cut™ approach is an alternative solution to provide both a high resistivity and an excellent thermal conductivity template needed for power applications. Although the structure has not been optimized, devices with 0.7μm gate length show breakdown voltage of >250V, fT of 18GHz, and fmax of 65GHz.
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