Abstract
Al doping is used in transparent conducting CuInO2 (CIO:Al) thin films for producing bipolar electrical conductivity. The doped thin films of electrical conductivity ~2 to 4 S/cm and mobility 100 to 101 V/cm2 are deposited by oxygen plasma assisted reactive evaporation technique. The change in conductivity from n-to p-type with the variation in doping atomic percentage is confirmed by multiple techniques like hot probe, hall and Seebeck measurements. The as deposited amorphous films are found to assume 3R poly type delafossite structure after post air annealing at 673 K. The suitability of the doped films in transparent device fabrication is verified by construction and characterization of a diode with configuration FTO/n-CIO:Sn/p-CIO:Al/Ag.
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