Abstract
Aluminum doped zinc oxide (AZO) based metal---insulator-semiconductor-insulator---metal (MISIM) photodetectors (PDs) with a thin SiO2 insulating layer were fabricated on Si substrates. Interdigited electrodes with three different electrode spacing "s" ~10, 20 and 50 μm were fabricated using palladium (Pd) metal and by keeping similar value of finger-spacing "a" and finger-width "b" for all the electrodes. The performance of Pd/SiO2/AZO/SiO2/Pd structured MISIM devices were compared with Pd/AZO/Pd structured MSM devices (which were not having insulating layer). The effect of SiO2 layer on the characteristics of Pd/SiO2/AZO/SiO2/Pd structured MISIM-PDs was studied systematically. The variation in the value of dark current and photo current according to finger-spacing were examined for all the three MISIM-PDs. The value of contrast-ratio for MISIM-I to MISIM-III devices was found to be 1113.40, 1185.05 and 3327.94 respectively. While, the value of contrast-ratio was lesser for similarly fabricated MSM devices.
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