Al-doped and undoped zinc oxide films obtained by soft chemistry

Abstract

Zinc oxide with a hexagonal wurzite type structure is an unique material that exhibits semiconducting, piezoelectric and pyroelectric properties. These properties play a key role for applications in optoelectronic devices. In the present work Al-doped and undoped ZnO films were obtained by soft chemistry starting with zinc acetate dihydrate and Al(III) isopropoxide in absolute ethyl alcohol. Trietanolamine was used as chelating agent. The films were deposited by dip coating technique on the silicon substrate and thermally treated at 500?C for one hour. The morphological characteristics of the films were investigated by Atomic Force Microscopy (AFM). Optical constants, such as refractive index (n) and extinction coefficient (k), were established by Spectroellipsometry measurements. Electrical conductivity of the studied films was determined in the 20-500?C temperature range by 'the four point method'. The morphology of the films is influenced by the starting sol composition, as found from AFM. According to the ellipsometric spectral data, more porous and thinner films, with smaller refractive index were obtained in the case of Al-doped ZnO films as compared with ZnO films. Both ZnO and Al-doped ZnO films presented high electrical receptivity. .