Abstract
Using electron paramagnetic resonance (EPR) and in one case also electron nucleardouble resonance new trapped electron and hole centres are characterised inZnWO4 single crystals. Inundoped and Al-doped ZnWO4 a new W5+-typedefect is produced by UV- or x-irradiation at 77 K. The centre is stabilised by a nearbyAl3+ impurity that issubstituting for Zn2+.In ZnWO4:Al in addition to the above electron-type defect three kinds of hole-type centrescreated by x-irradiation at 77 K are also studied: one of these is assigned to anO− ion near aVZn–AlZn3+ complex, andthe second to an O− ion near a VZn–OH− pair. The - and hydrogen super hyperfine (SHF) tensors of the latter centre have been publishedpreviously. Due to the higher concentration in the Al-doped crystal, SHF tensors of two Wneighbours could also be determined. The third hole-type defect shows quartet SHF(I = 3/2) with a 100% abundant nucleus and therefore theO− in this centre is mostlikely stabilised by an Na+ impurity. Complete sets of EPR parameters are compared for trapped electron and trappedhole centres including previously characterised defects.
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