Al 0.15 Ga 0.85 N ∕ Ga N high electron mobility transistor structures grown on p-type Si substrates

Abstract

We report on experimental studies of Al0.15Ga0.85N∕GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov–de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of AlxGa1−xN∕GaN HEMT structures with the mature Si technology in industry.