Abstract
The electron-beam physical vapor deposition (EBPVD) technique was selected for nickel oxide (NiOx) film deposition at room temperatures. NiOx film (18 nm thick) was deposited as a hole transporting material (HTM) for inverted perovskite solar cells (PSCs) onto a fluorine-doped tin oxide (FTO)-coated glass substrate at a chamber vacuum pressure of 4.6×104 Pa. PSCs were fabricated as a glass/FTO/NiOx(HTM)/CH3NH3PbI3/PC61BM/BCP/Ag structure with as-deposited and annealed (500 °C for 30 min) NiOx films. Under 100 mW cm-2 illumination, as-deposited and annealed NiOx as HTM in PSCs (0.16 cm2) showed a high-power conversion efficiency (PCE) of 13.20% and 13.24%, respectively. The as-deposited and annealed PSCs retained 72.2% and 76.96% of their initial efficiency in ambient conditions, correspondingly. This study highlights the possibility of achieving highly crystalline and finely disseminated NiOx films by EBPVD for fabricating efficient inverted PSCs.
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