Air-Cooled Full-SiC High Power Density Inverter Unit

Y Murakami,Y Tajima,S Tanimoto

doi:10.3390/wevj6030669

Abstract

A 70 kVA/L air-cooled full-SiC three-phase inverter unit including power semiconductor modules, power capacitors, bus bars, gate drive circuits, a PWM wave generator and blower fans has been fabricated as a prototype for EV-use. SiC JFETs and SBDs of 1200 V were used. It has generated three-phase alternative power of 25 kVA to drive a 15 kW-class induction motor with only 190 W of dissipation. The module's temperature was at most 90 ºC.

Highlights

Silicon carbide (SiC) semiconductor device is expected as one of the most promising candidates for the generation power device because of its higher conductivity and faster switching performance compared to those of silicon power device, which is widely utilized in vehicles
That implies for vehicle that we achieve a possibility to realize a high power density inverter without any liquid cooling system by using SiC
Development of packaging technologies for high temperature power semiconductor device is the critical issue for future of electric-powered vehicles

Summary

Introduction

Silicon carbide (SiC) semiconductor device is expected as one of the most promising candidates for the generation power device because of its higher conductivity and faster switching performance compared to those of silicon power device, which is widely utilized in vehicles. It can withstand higher temperature than Si devices [1]. That implies for vehicle that we achieve a possibility to realize a high power density inverter without any liquid cooling system by using SiC.

Structure

Experiment

Discussion

Conclusion