Abstract
A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB at V-band. The air-bridged Schottky diode provides a tuneable capacitance in the range between 30 and 50 fF under an applied reverse voltage bias. This can be used to alter the resonant frequency and phase response of a split patch unit cell of a periodic metasurface. The air-bridged diode die, which is flip-chip soldered to the patch, has ultra-low parasitic capacitance and resistance. Simulated and measured results are presented which verify the potential for the attainment of diode switching speeds with acceptable losses at mmWave frequencies. Furthermore the study shows that this diode-based unit cell can be integrated into metamaterial components, which have potential applications in future mmWave antenna beam-steering, intelligent reflecting surfaces for 6G communications, reflect-arrays, transmit-arrays or holographic antennas.
Highlights
A low loss metamaterial unit cell is presented with an integrated Gallium Arsenide (GaAs) air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB at V-band
There is significant interest in the use of novel diode technologies, such as those based on Gallium Arsenide (GaAs) air-bridged Schottky configurations, which are designed to remove significant parasitic elements that limit high frequency p erformance[18]
Applications of this class of GaAs Schottky diodes are found in mixers and frequency multipliers at submillimetre frequencies for use in test equipment, scientific experimentation, security and communication system components up to and beyond 300 GHz19,20
Summary
A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB at V-band. There is significant interest in the use of novel diode technologies, such as those based on Gallium Arsenide (GaAs) air-bridged Schottky configurations, which are designed to remove significant parasitic elements that limit high frequency p erformance[18]. Applications of this class of GaAs Schottky diodes are found in mixers and frequency multipliers at submillimetre frequencies for use in test equipment, scientific experimentation, security and communication system components up to and beyond 300 GHz19,20. Metamaterials and metasurfaces have been revolutionising electromagnetics and have applications in many antenna and sensing s ystems[34,35,36]
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