AIN heteroepitaxial and oriented films grown on (111), (110) and (100) natural diamond faces

Abstract

Abstract CVD growth of A1N thin films on (100), (110) and (111) diamond Cα substrates was observed, and RHEED and EPMP were used to provide the evidence of growth of epitaxial (01 · 1) [11 · 3] A1N//(111) [110] Cα or oriented wurtzitic A1N on (111) diamond. Twinning in A1N films on (111) Cα, was found. In the case of the (111) substrate, it was shown that in starting from a 0.4 μm film thickness, a conversion of epitaxial growth to a growth texture with a [00 · 1] axis normal to substrate takes place. The same textures were observed on both (100) and (110) diamond faces for 0.2–0.3 μm and greater film thickness. For an A1N thickness of about 1 μm, the crystallite size near outer A1N film surface was 10–20 nm.