Abstract
AIN films were prepared with a new four-pair facing target type sputtering method at a low substrate temperature. The composition x of the AI x N films had a close relationship with the AI target sputtering current ( I AI) and the substrate bias ( V b). When I AL = 200 mA and V b = −90 V stoichiometric AIN films were obtained and the deposition rate was about 140 Å min −. The substrate temperature was lower than 80°C during sputtering. The AIN films prepared under these conditions were in an amorphous state. Without breaking the vacuum the AIN films were deposited consecutively onto magneto-optical TbFeCo films which were also prepared with this four-pair facing target type sputtering method. The AIN films could also enhance the Kerr rotation angle θ K .
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