Abstract
Heteroepitaxial growth of Ag on Si(111)-(7X7) surface at various conditions was experimentally studied by scanning tunneling microscopy. A growth model based on experiments was used for kinetic Monte Carlo (KMC) simulations. The simulations of nucleation and island growth at low coverage and fitting experimental data provided basic growth parameters. Further growth—formation of a discontinuous transition film (wetting layer)—was implemented into the basic model. The suggested growth mechanism was successfully tested using the KMC simulations. The choice of experiments, the role of minimizing processes and parameters in the model, and efficiency of the used approach is demonstrated and discussed.
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