Abstract
AlGaAs/GaAs high power diode lasers with a nominal output power of 15W were aged at different conditions. At a heatsink temperature of 25 degrees C aging at constant current (CC) and constant power (CP) mode is compared for aging times of 6000 hours. We derived an end-of-life criteria that results in the same lifetime for CC and CP operation assuming identical degradation mechanisms in both cases. The degradation observed differs only significantly beyond 3000-4000 hours of aging with increasing degradation for CP operation. In constant current mode the heatsink temperature is increased resulting in a junction temperature of about 80 degrees C. Assuming an Arrhenius relation the activation energy is estimated. It turns out that different activation energies can be derived either by taking the degradation of the output power at the elevated temperature or at the reference temperature respectively.
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