Abstract
Silicon-based dielectric coatings were deposited from tetravinylsilane or a mixture of tetravinylsilane with oxygen gas by pulsed plasma. The coatings in the form of a-SiC:H or a-SiOC:H alloy were stored at ambient conditions for 800 h to investigate aging effects. The SiH, SiC, and CH x species in the plasma polymer film were identified as responsible for strong oxidation of the deposited material. The increased oxygen concentration up to 19 at.% in the dielectric coatings resulted in a decrease of the refractive index. Oxygen concentrations > 10 at.% resulted in reduction of mechanical properties of dielectric coatings deposited at powers ≥ 2.5 W. Suitable deposition conditions were deduced to reduce aging effects.
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