Abstract

Point defect migration is considered as a mechanism to yield aging in ferroelectrics. Different from magnetic systems, ferroelectric domains can be pinned by free charges at the perimeter of otherwise homogeneous grains or crystals. This clamping is shown to be stronger due to the reorientation of defect dipoles. Clamping stresses are calculated to be in the range of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> Pa in a uniaxial model corresponding to experimental values in the model material BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . Their time dependence is given in a uniaxial model case. An extension to three dimensions is discussed. The values are independent of the type of mobile defect charge carrier, electronic or ionic.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.