Abstract
Room temperature aging tests have been carried out on molecular beam epitaxially grown InGaAs/InP BH (buried heterostructure) lasers with LPE (liquid phase epitaxy) InP burying layers and LPE-grown InGaAs/InP BH lasers. Both types of lasers have operated continuously at room temperature in air for more than 8000 h at 4–8 mW/facet, and are still operating stably. Except for slight changes in the threshold currents at an early stage of the aging test, these lasers did not show noticeable change in the longitudinal mode, far field pattern, and light output response under pulsed operation before and after aging.
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