Abstract

Formation of a p–n heterojunction rather than p-type or n-type semiconductors can enhance the separation of photogenerated electrons and holes and increase the quantum efficiency of photocatalytic reactions owing to the difference of the electric potential in the inner electric field near the junction, pointing from n toward p. n-Ag3PO4/p-Ag2CO3 p–n heterojunction composites are prepared through a facile coprecipitation process. The obtained Ag3PO4/Ag2CO3 p–n heterojunctions exhibit excellent photocatalytic performance in the removal of rhodamine B (RhB) compared with Ag3PO4 and Ag2CO3. The 40%-Ag3PO4/Ag2CO3 composite photocatalyst (40 mol% Ag3PO4 and 60 mol% Ag2CO3) exhibits the best photocatalytic activity under visible light, demonstrating the ability to completely degrade RhB within 15 min. Transient photovoltage characterization and an active species trapping experiment further indicate that the formation of a p–n heterojunction structure can greatly enhance the separation efficiency of photogenerated carriers and produce more free h+ active species, which is the predominant contributor for RhB removal.

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