Abstract
Here, we present a broadband high responsivity piezo-phototransistor based on Ag-Si-MoS2 structure, in which the photoresponsivity can be modulated by stimulating the piezoelectric effect in MoS2 sheets. We investigated the spectral photoresponse of the fabricated device and compared the output responsivity in the relaxed and strained operating conditions. The maximum strain-induced responsivity enhancement achieved in this study is 36%. The proposed piezo-phototransistor benefits from a high responsivity and a well-controlled electric gating on the output photoresponse over a wide wavelength range.
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