Abstract
The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous <TEX>$Ge_{0.5}Se_{0.5}$</TEX> thin films have been demonstrated by using Ti/Ag nanocrystals/<TEX>$Ge_{0.5}Se_{0.5}$</TEX>/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous <TEX>$Ge_{0.5}Se_{0.5}$</TEX> thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/<TEX>$Ge_{0.5}Se_{0.5}$</TEX>/Pt structure, this Ti/Ag NCs/<TEX>$Ge_{0.5}Se_{0.5}$</TEX>/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> <TEX>$10^4$</TEX> sec) properties were found from the Ti/Ag NCs/<TEX>$Ge_{0.5}Se_{0.5}$</TEX>/Pt structured ReRAM device.
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