Abstract
Here we report about Ag induced photo-generated charge-trapping centers in nanostructured CdS/Cu2S thin film. The nanostructured CdS/Cu2S thin films prepared by chemical route while Ag incorporation achieved by cost effective chemical ion exchange route at room temperature. The obtained thin films were annealed at 250°C in air and later characterized for structural, optical and I-V characteristics. X-ray diffraction pattern confirms Ag incorporation in CdS/Cu2S heterojunction with increase in crystallite size from 32 to 50 nm. Scanning electron microscopy shows closed mouth structure of the CdS: Ag/Cu2S than CdS/Cu2S thin films. Blue shift in optical absorbance strength and energy band gap value from Eg = 2.27 to 2.10 eV is observed. Improvement in solar energy conversions efficiency from η = 0.24 % to 0.92 % is obtained upon doping.
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