Abstract
We present the preliminary results of temperature and frequency dependent dielectric measurements on Ba(Co 1/3Nb 2/3)O 3 (BCN) thin films. These films were prepared on indium tin oxide (ITO) coated glass substrates by the pulse laser deposition (PLD) technique. It exhibits single-phase hexagonal symmetry. These films were irradiated with Ag 15+ (200 MeV) and O 7+ (100 MeV) beams at the fluence 1 × 10 11, 1 × 10 12, and 1 × 10 13 ions/cm 2. On irradiating these films, its dielectric constant ( ɛ′) and dielectric loss (tan δ) parameters improve compared to un-irradiated film. Compared to O 7+ irradiation induced point/cluster defects Ag 15+ induced columnar defects are more effective in reducing/pinning trapped charges within grains. The present paper highlights the role of swift heavy ion irradiation in engineering the dielectric properties of conductive samples to enable them to be useful for microwave device applications.
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