Abstract
Two types of aftereffects were observed in testing IMPATT diodes under ionizing radiation. The first type can be characterized by a 10-25-percent decrease in power and a 5-20-MHz change in oscillation frequency after the radiation pulse. The second type is characterized by a large change in oscillator performance (3-dB decrease in power and 1-GHz change in frequency) or irreversible diode failure, and occurred with two GaAs Schottky diodes. A strong cavity-RF load dependence has been demonstrated for the latter type of aftereffect.
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