Abstract
In this study, a single junction dc photovoltaic solar cell simulation was carried out. ZnO/n-CdS/p-CdTe/Ag cell properties were investigated through the recognized ‘Automatic Heterostructure Simulation (AFORS-HET)'. In the theoretical simulation process, the temperature was between 200 K and 400 K and the acceptor concentration of the CdTe layer was in the range of 1014 cm−3-1019 cm−3. The variation of Voc (open circuit voltage), Jsc (short circuit current density), FF (filling factor) and η (efficiency) values with T (temperature) and Na (acceptor concentration) were investigated. It was observed that as Na increased, Voc values increased and Jsc values decreased. Voc, FF and η decreased as the temperature was increased. Also, the sensitivity of FF to Na increased for acceptor concentration values greater than 1018 cm−3. It has been also shown that the filling factor decreased with photovoltaic current. ZnO/n-CdS/p-CdTe/Ag cells with an acceptor concentration greater than 1018 cm−3 exhibited high efficiency for all studied temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
