Abstract
We studied strained & lattice matched InGaAsN, InGaAs, and GaAsN layers, grown on GaAs substrate with gas source molecular beam epitaxy. Nitrogen concentration and lattice-matched condition have been established from Vegard's law with X-ray diffraction. Atomic force microscope measurement, at 22-monolayer thickness, shows different growth mechanism for each composition. Especially, a mesh-like surface morphology of lattice matched InGaAsN has been revealed in this study.
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