Abstract
Oxygen-deficient vanadium dioxide thin films (VO2) have been deposited onto (0 1 2)sapphire and SiO2Si by laser ablation. The levels of oxygen deficiency in the films were controlled by changing the pressure of oxygen ambient during deposition. Their surface structures were observed by laser scanning microscopy (LSM) and atomic force microscopy (AFM). The correlation between the surface morphology and the level of oxygen deficiency in VO2 was determined. The surface roughness of VO2 thin films deposited onto sapphire at 500°C, calculated from the AFM images, monotonically decreased as the oxygen pressure increased from 10 to 30 mTorr of oxygen pressure, while those values for VO2 at 300°C showed the contrary dependence for the oxygen pressure. At 400°C, minimum value exists near 20 mTorr.
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