Abstract
In this study diffusion areas and junctions of semiconductor structures have been analyzed by Atomic Force Microscopy (AFM) - techniques such as Scanning Capacitance Microscopy (SCM), Scanning Capacitance Spectroscopy (SCS), High Speed Scanning Capacitance Spectroscopy (HSSCS) and Differential Scanning Capacitance Spectroscopy (DSCS). The experimental setups are explained and the measurement procedures are described. Beginning with basic sample preparation techniques, cases studies are presented and advantages and disadvantages of the different techniques are discussed.
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