Abstract
This paper describes the fabrication and performance of affordable LW infrared focal plane arrays (IRFPAs) made from HgCdTe (MCT) grown by Metal Organic Vapour Phase Epitaxy (MOVPE) bump bonded to silicon read-out integrated circuits (ROICs). The growth substrate is GaAs, being readily available from several sources and suitable for wafer scale processing. Arrays of size up to 640x512 at 24 μm pixel pitch have been produced, encapsulated, and demonstrated in a camera system. Arrays of this size are produced in n-on-p material, that is, the common layer is p-type. This orientation is chosen from a contact technology viewpoint. It is shown that at higher biases trap-assisted tunnelling (TAT) can limit the performance of arrays. This becomes an issue for large arrays at high infrared flux with a p-type common layer due to its inherent higher sheet resistance compared to n-type, this can result in debiassing of the central elements. The key is found to be the control of the MCT structure and quality to ensure good diode performance with minimal TAT, allowing the higher biases needed to overcome debiassing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
