Abstract
In extreme ultraviolet (EUV) lithography development, the reduction of line width roughness (LWR) is a one of the significant issues. It has been reported that the LWR of photoacid generator (PAG) bounded resist is lower than that of PAG blended resist. It is considered that the chemical composition distribution of PAG bounded resist is more uniform than PAG blended resist. However, it has not been evaluated systematically and experimentally. In this study, we introduced the contact angle measurement method for the evaluation of the chemical composition distribution between PAG blended resist and PAG bounded resist. It is clarified that the resist thin film has a different chemical composition distribution from the center to the outside of wafer regardless of the type of resists. In particular, the chemical composition distribution of the bounded resist showed the opposite behavior to that the blended one.
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