Abstract
AbstractAuger electron spectroscopy has been applied to a study of chemical structure effects in silicon oxides caused by changes of the surface or bulk stoichiometry. Ion‐damaged SiO2, vacuum‐deposited SiOx (1 < × < 2) and Si/SiO2 interfaces were investigated. Silicon enrichment causes not only the growth of the elemental Si peak, but also a broadening of the main oxide peak. Detailed comparison of the Si LVV spectra in the three types of samples suggests that the elemental Si component occurs with the same local structure as in bulk silicon.
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