Abstract
Sb diffusion in an amorphous Si thin film and Sb segregation kinetics onto the Si film were studied by Auger electron spectroscopy in the temperature range of 600-723 K. Segregation factors and antimony diffusivities were estimated from the experimental kinetics curves, on the basis of the Lea and Seah model, the Sb bulk concentration in Si films being studied by TEM. Sb diffusivities in amorphous Si proved to be 10-12 orders of magnitude higher than that of measured in crystalline Si, the pre-exponential factors being of the same order of magnitude.
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