Abstract
The adsorption of NO on Al(100) at room temperature was investigated by means of AES and XPS. Results were compared with those obtained on adsorption of O 2 on Al(100) and for nitrogen implanted Al. The adsorption was found to be dissociative. Three states in the adsorption process were distinguished: (1) dissociative chemisorption, (2) formation of an oxide and nitride layer and (3) saturation of the adsorbent surface. The thickness of the adlayer was estimated from AES line intensities. The chemical stability of the adlayer is considered and charge transfer to the oxygen and nitrogen adatoms is estimated.
Published Version
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