Abstract
The surface passivation technique using (NH 4) 2S x on GaAs(100) surface was investigated. With this surface treatment, the effective barrier heights for both AlGaAs and AuGaAs Schottky diodes were found to vary with the metal work functions, which is clear evidence of the lower surface state density. AES and SRUPS measurements were done to characterize the surfaces including their compositions. In this paper, interpretations on this novel passivation effect are also provided.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
